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Product Family: 1200V

1200V Silicon Carbide (SiC) MOSFET bare die feature low RDS(on) properties with a higher level of temperature independency versus Silicon. The SiC die construction enables higher power density per mm2 and consequentially smaller more rugged chips which can be driven faster & harder versus Silicon.

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Available Products:

AMS1200013B3 1200 Volt 13mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS1200016B 1200 Volt 16mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS1200018B 1200 Volt 18mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS1200032B2 1200 Volt 32mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS1200075B 1200 Volt 75mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
CPM2-1200-0025A 1200 Volt 25mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM2-1200-0040A 1200 Volt 40mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM2-1200-0080A 1200 Volt 80mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM2-1200-0160A 1200 Volt 160mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM3-1200-0013A 1200 Volt 13mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM3-1200-0016A 1200 Volt 16mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM3-1200-0021A 1200 Volt 21mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM3-1200-0032A 1200 Volt 32mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
CPM3-1200-0075A 1200 Volt 75mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
EPM3-1200-0017D 1200 Volt 17mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
EPM3-1200-0017D1 1200 Volt 17mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
G3R12MT12-CAL 1200 Volt 12mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
G3R20MT12-CAL 1200 Volt 20mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
G3R30MT12-CAL 1200 Volt 30mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NTC020N120SC1 ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.
NTC040N120SC1 1200 Volt 39mΩ Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NTC080N120SC1 1200 Volt 80mΩ Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NVC020N120SC1 1200 Volt 103 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NVC040N120SC1 1200 Volt 60 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NVC080N120SC1 1200 Volt 31 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200M2016 1200 Volt 140 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200M2040 1200 Volt 55 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200M2080 1200 Volt 41 Amp Silicon Carbide MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SMS1200020B 1200 Volt 20mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
SMS1200032B 1200 Volt 32mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.