- Capable of high temperature operation >= 175°C
- Avalanche Rated 264 mJ
- Typ RDS(on) = 20mΩ at VGS=20V, ID=20A
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
- High Gate Resistance for Drives
Applications:
- High Temperature Electronics
- Industrial Motor Loads
- Wind Generation Inverter
- Solar Inverter
- EV battery chargers
- High voltage DC/DC converters
- UPS
- Switching Power Supplies
ON Semi
Electrical Datasheet
Die Physical Data:
Footprint: 27.090mm² (41989.629mil²)
Request Pad Layout
- Technology: M1
VGS: -15/+25V
VGS(th)min: 1.8V
ID: 103A
EAS: 264mJ
RDS(ON): 20mΩ
RDS(on) @ Thigh: 30mΩ
Qg: 203nC
COSS: 260pF
QrrBody Diode: 240nC
trrBody Diode: 31ns
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.