Innovate > Integrate > Empower - Design at Die Level

Login or Register for access

Parametric Search

Select components by electrical specification

Inventory Search

Select short lead-time components by part number

  Back to List

Product Family: 3300V

3300V (3.3kV) Silicon Carbide (SiC) Bare Die MOSFET
Please use our Parametric Search Tool or alternatively select a product from the list below:

Available Products:

  • CC3380354L   3300 Volt (3.3kV) 70mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
  • G2R50MT33-CAL   3300 Volt (3.3kV) 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.

Other Families in SiC MOSFET:

1200V
1700V
3300V
6500V
650V, 750V, 900V
Share with

My Profile

Login
Register

Contact

Email Sales

Email Engineering

Featured Product

Prod 16151

INN650N080BS

650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.

News and Articles

Sanan SiC Bare Die MOSFETS

Sanan SiC Bare Die MOSFETS

Silicon Carbide (SiC) Bare Die MOSFETs from Sanan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.