Available Products:
- G2R50MT33-CAL 3300 Volt (3.3kV) 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
4-channel CMOS / LVCMOS Digital Isolator eliminates current noise and provides up to 5kV RMS isolation per UL 1577.
Silicon Carbide (SiC) Bare Die MOSFETs from Sanan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.