Available Products:
- G2R50MT33-CAL 3300 Volt (3.3kV) 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
Product Family: 3300V
3300V (3.3kV) Silicon Carbide (SiC) Bare Die MOSFET
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AMS1200013B3
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.
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Senan SiC Bare Die MOSFETS
Silicon Carbide (SiC) Bare Die MOSFETs from Senan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.
