Product Family: 3300V

3300V (3.3kV) Silicon Carbide (SiC) Bare Die MOSFET

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G2R50MT33-CAL 3300 Volt (3.3kV) 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.

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650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.

Silicon Carbide (SiC) Bare Die MOSFETs from Sanan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.