Available Products:
- G2R50MT33-CAL 3300 Volt (3.3kV) 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
Product Family: 3300V
3300V (3.3kV) Silicon Carbide (SiC) Bare Die MOSFET
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NTC020N120SC1
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.
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High-Speed Die Processing/Sorting
Additional capacity delivers >5000UPH throughput with 24-hour operation for volume bare die sort / pick & place.
