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Product Family: 1700V

1700V Silicon Carbide (SiC) MOSFET bare die enable efficient high-speed switching by using a rugged high-temperature capable semiconductor structure to realize low On-resistance. This combination realizes smaller chip sizes & further increases efficiency by reduction of capacitance & gate charge.

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Available Products:

CPM3-1700-R020E 1700 Volt 18mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
G3R20MT17-CAL 1700 Volt 20mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
G3R45MT17-CAL 1700 Volt 45mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SMS1701000B 1700 Volt 700mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.