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Bare Die Product Detail: INN650N080BS

High Power:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
This rugged bare die offers maximized power density, high operating temperature / reduced cooling requirement & improves system reliability. Higher speed switching is possible with lower conduction losses over temperature for increased efficiency.
Features:
  • Cost effective high performance upgrade of equivalent Si MOSFET
  • Much smaller form factor than Si or SiC for equivalent power density
  • Capable of high temperature operation >150°C
  • Typ RDS(on) =60mΩ at VGS=6V, ID=8A
  • High Speed Switching with Low Capacitance
  • Ease of Paralleling
  • Resistant to Latch-up

Applications:

  • High Temperature Electronics
  • Industrial Motor Loads
  • Wind Generation Inverter
  • Solar Inverter
  • EV battery chargers
  • High voltage DC/DC converters
  • UPS
  • Switching Power Supplies

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Vendor:
Innoscience
  Electrical Datasheet

Die Physical Data:
Footprint: 8.858mm² (13729.415mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Supply Format: Die
Specification:
VDS (Max): 650V
VGS: 7V
RDS(ON): 60
RDS(ON)MAX: 80
Qg: 6.20nC
Qgs: 0.50nC
Qgd:   n/a
QOSS: 60.00nC
ID: 29.0A
IDM: 58.0A
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.