- Capable of high temperature operation >= 175°C
- Avalanche Rated 171 mJ
- Typ RDS(on) = 80mΩ at VGS=20V, ID=20A
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
- High Gate Resistance for Drives
Applications:
- High Temperature Electronics
- Industrial Motor Loads
- Wind Generation Inverter
- Solar Inverter
- EV battery chargers
- High voltage DC/DC converters
- UPS
- Switching Power Supplies
ON Semi
Electrical Datasheet
Die Physical Data:
Footprint: 8.410mm² (13035.540mil²)
Request Pad Layout
- Technology: M1
VGS: -15/+25V
VGS(th)min: 1.8V
ID: 31A
EAS: 171mJ
RDS(ON): 80mΩ
RDS(on) @ Thigh: 114mΩ
Qg: 56nC
COSS: 80pF
QrrBody Diode: 62nC
trrBody Diode: 16ns
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.