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Product Family: 650V, 750V, 900V

650V, 750V and 900V Silicon Carbide (SiC) MOSFET bare die exhibit low RDS (ON) figures with high temperature independency to enable faster switching frequency potential & less system EMI. Chip sizes are also smaller versus Silicon due to the power density of the SiC structure.

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Available Products:

AMS0650035B 650 Volt 35mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS0650050B 650 Volt 50mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
AMS0750011B 750 Volt 11mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.
CPM3-0650-0015A 650 Volt 15mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPM3-0900-0010A 900 Volt 10mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPM3-0900-0030A 900 Volt 30mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPM3-0900-0065A 900 Volt 65mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
G3R10MT07-CAL 750 Volt 10mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SMS0650027B 650 Volt 27mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. With customizable top metal and back metal for either wire-bonding or sintering assembly methods.