Product Sub-Group: GaN MOSFET
Compared with Si or SiC MOSFET technology, use of GaN MOSFET transistors in bare die form realizes a substantially smaller device area for a given power density and with equivalent or better switching performance.
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NTC020N120SC1
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.
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High-Speed Die Processing/Sorting
Additional capacity delivers >5000UPH throughput with 24-hour operation for volume bare die sort / pick & place.
