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Product Family: High Power

These GaN MOSFETs in bare die form are well suited for use in power module applications and high power rapid charging applications.
Please use our Parametric Search Tool or alternatively select a product from the list below:

Available Products:

  • INN650N05   650 Volt 2 Amp 620mΩ Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
  • INN650N080BS   650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
  • INN650N140A   650 Volt 17Amp 106mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.
  • INN650N190A   650 Volt 11.5 Amp 138mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.
  • INN650N240A   650 Volt 10 Amp 165mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.
  • INN650N2K2A   650 Volt 1.6 Amp 1600mΩ Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
  • INN650N2K2B   650 Volt 0.8 Amp 1600mΩ Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
  • INN650N350A   650 Volt 7 Amp 270mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.
  • INN650N500A   650 Volt 5 Amp 365mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.
  • INN650N600A   650 Volt 3.3 Amp 470mΩ Gallium Nitride (GaN). Metalized with Aluminum on topside for wirebonding.

Other Families in GaN MOSFET: