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Product Family: N-Channel Dual Monolithic

These monolothic dual JFETs deliver tighter IDSS matching & better thermal tracking versus individually matched JFETs. Bare die form enables smallest possible form factor & in package form board space is reduced by integrating x2 FETs within one small package.
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Available Products:

  • 2N3954   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift.The 2N3954 monolithic dual JFET is characterized for low & medium frequency differential amplifiers requiring low offset voltage, drift, noise & capacitance.
  • 2N3954A   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift.The 2N3954A monolithic dual JFET is characterized for low & medium frequency differential amplifiers requiring low offset voltage, drift, noise & capacitance.
  • 2N3955   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift.The 2N3955 monolithic dual JFET is characterized for low & medium frequency differential amplifiers requiring low offset voltage, drift, noise & capacitance.
  • 2N3956   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift.The 2N3956 monolithic dual JFET is characterized for low & medium frequency differential amplifiers requiring low offset voltage, drift, noise & capacitance.
  • 2N3958   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift.The 2N3958 monolithic dual JFET is characterized for low & medium frequency differential amplifiers requiring low offset voltage, drift, noise & capacitance.
  • 2N5911   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. 2N5911 monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • 2N5912   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. 2N5912 monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • 2N5912C   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. 2N5912C monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • LS5905   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5905 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
  • LS5906   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5906 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
  • LS5907   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5907 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
  • LS5908   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5908 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
  • LS5909   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5909 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
  • LS830   Monolithic Dual N-Channel JFET amplfier - Ultra-low leakage, low drift. LS830 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • LS831   Monolithic Dual N-Channel JFET amplfier - Ultra-low leakage, low drift. LS831 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • LS832   Monolithic Dual N-Channel JFET amplfier - Ultra-low leakage, low drift. LS832 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • LS833   Monolithic Dual N-Channel JFET amplfier - Ultra-low leakage, low drift. LS833 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • LS840   Monolithic Dual N-Channel JFET amplifier - Low noise, low drift, low capacitance. The LS840 features low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LS841   Monolithic Dual N-Channel JFET amplifier - Low noise, low drift, low capacitance. The LS841 features low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LS842   Monolithic Dual N-Channel JFET amplifier - Low noise, low drift, low capacitance. The LS842 features low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LS843   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LS843 features extremely low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LS844   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LS844 features extremely low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LS845   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LS845 features extremely low noise, tight offset voltage and low drift & is targeted for use in a wide range of precision instrumentation applications.
  • LSK389A   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LSK389A uses a unique interleaved construction to deliver excellent matching & thermal tracking with high signal-to-noise ratio.
  • LSK389B   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LSK389B uses a unique interleaved construction to deliver excellent matching & thermal tracking with high signal-to-noise ratio.
  • LSK389C   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LSK389C uses a unique interleaved construction to deliver excellent matching & thermal tracking with high signal-to-noise ratio.
  • LSK389D   Monolithic Dual N-Channel JFET amplifier - Ultra-low noise, low drift, low capacitance. The LSK389D uses a unique interleaved construction to deliver excellent matching & thermal tracking with high signal-to-noise ratio.
  • LSK489   The LSK489 series of high performance monolithic dual JFETs features extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range or precision instrumentation applications.
  • LSK589   Monolithic Dual N-Channel JFET amplfier - Low noise, low capacitance. The LSK589 monolithic dual JFET delivers high transconductance.
  • SST401   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST401 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST402   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST402 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST403   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST403 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST404   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST404 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST405   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST405 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST406   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. SST406 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • SST440   Monolithic Dual N-Channel JFET amplfier - High gain, wideband. SST440 monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching.
  • SST441   Monolithic Dual N-Channel JFET amplfier - High gain, wideband. SST441 monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching.
  • SST5911   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. SST5911 monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • SST5912   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. SST5912 monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • SST5912C   Monolithic Dual N-Channel JFET amplfier - Low noise, wideband. SST5912C monolithic structure reduces parasitics for performance at very high frequency & enables tight matching. Used for wideband differential amplifiers in test & measurement.
  • U401   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U401 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U402   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U402 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U403   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U403 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U404   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U404 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U405   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U405 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U406   Monolithic Dual N-Channel JFET amplfier - Low noise, low drift. U406 monolithic dual JFET features extremely low noise, tight offset voltage & low drift over temperature & is used in a wide range of precision instrumentation applications.
  • U421   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U421 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U422   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U422 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U423   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U423 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U424   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U424 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U425   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U425 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U426   Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The U426 monolithic dual n-channel JFET provides very high input impedance for differential amplification & impedance matching. Gate current is low specified at -250 fA.
  • U440   Monolithic Dual N-Channel JFET amplfier - High gain, wideband. U440 monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching.
  • U441   Monolithic Dual N-Channel JFET amplfier - High gain, wideband. U441 monolithic dual chip design reduces parasitics and gives better performance at very high frequencies while ensuring extremely tight matching.