- Low noisen 4nV/√Hz (TYP)
- High transconductance gfs(MIN) 4000µS
Applications:
- Wideband Differential Amplifiers
- High-speed temperature compensated single-ended input amplifiers
- High-speed comparators
- Impedance converters
- Vibration detectors
Test conditions:
- BVGSS -25V @ IG = -1000 nA, VDS = 0V
- IGSS(MAX) -50 pA @ VGD = -15V, VDS = 0V
- |VGS1-VGS2|(MAX) 40mV @ VDG = 10V, ID = 5000 µA
- ∆|VGS1-VGS2|/∆T 40 µV°C @ VGD = 10V, ID = 5000µA, -55°C to +125°C
- VP(MIN) -1V @ VDS = 10V, ID = 1 nA
- VP(MAX) -5V @ VDS = 10V, ID = 1 nA
- IDSS(MIN) 7mA @ VDS = 10V, VGS = 0V
- IDSS(MAX) 40mA @ VDS = 10V, VGS = 0V
- Gfs(MIN) 4000µS @ VDG = 10V, VGS = 0V, ID = 5000µA, f = 1kHz
- en(TYP) 4nV/√Hz @ VDG = 10V, ID = 5000µA, f = 10kHz
- CISS(MAX) 5pF @ VDS = 10V, ID = 5000µA, VGS = 0V, f = 1MHz
- CRSS(MAX) 1.2pF @ VDG = 10V, VGS = 0V, ID = 5000µA, f = 1MHz
Linear Systems
Electrical Datasheet
Die Physical Data:
Footprint: 0.418mm² (648mil²)
Request Pad Layout
- Type: High Frequency
IGSS: -50pA
|VGS1-VGS2|: 40mV
∆|VGS1-VGS2|/∆T: 40µV/°C
VGS(OFF) MIN: -1.00V
VGS(OFF) MAX: -5.0V
IDSS(MIN): 7.00mA
IDSS(MAX): 40.0mA
gfs(MIN): 4,000µS
en: 4.0nV√Hz
CISS(MAX): 5pF
CRSS(MAX): 1.2pF
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.