- High CMRR ≥ 85dB
- Low gate leakage IGSS ≤ 1pA
Applications:
- Wideband differential amplifiers
- High-speed temperature compensated single-ended input amplifiers
- High speed comparators
- Impedance conV/√Hzerters
- Vibration detectors
Test conditions:
- BVGSS -40V @ IG = -1000 nA, VDS = 0V
- IGSS(MAX) -500 pA @ VGS = -15V, VDS = 0V
- |VGS1-VGS2|(MAX) 20mV @ VDG = 10V, ID = 5000 µA
- ∆|VGS1-VGS2|/∆T 20 µV°C @ VGD = 10V, ID = 5000µA, -55°C to +125°C
- VP(MIN) -1V @ VDS = 10V, ID = 1 nA
- VP(MAX) -6V @ VDS = 10V, ID = 1 nA
- IDSS(MIN) 6mA @ VDS = 10V, VGS = 0V
- IDSS(MAX) 30mA @ VDS = 10V, VGS = 0V
- Gfs(MIN) 4500µS @ VDS = 10V, VGS = 0V, ID = 5000µA, f = 1kHz
- en(TYP) 4nV/√Hz @ VDS = 10V, ID = 5000µA, f = 10kHz
- CISS(MAX) 3pF @ VDS = 10V, ID = 5000µA, VGS = 0V, f = 1MHz
- CRSS(MAX) 1pF @ VDS = 10V, VGS = 0V, ID = 5000µA, f = 1MHz
Linear Systems
Electrical Datasheet
Die Physical Data:
Footprint: 0.418mm² (648mil²)
Request Pad Layout
- Type: High Frequency
IGSS: -500pA
|VGS1-VGS2|: 20mV
∆|VGS1-VGS2|/∆T: 20µV/°C
VGS(OFF) MIN: -1.00V
VGS(OFF) MAX: -6.0V
IDSS(MIN): 6.00mA
IDSS(MAX): 30.0mA
gfs(MIN): 4,500µS
en: 4.0nV√Hz
CISS(MAX): 3pF
CRSS(MAX): 1.0pF
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.