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Product Family: 1700V

1700V Silicon Carbide (SiC) Schottky diode bare die are electrically superior to Silicon chip diodes. The efficient Schottky structure built using this high voltage, high current, high temperature capable substrate material provides fast switching speed, more power per area & inherent ruggedness.

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Available Products:

GD75MPS17-CAL 1700 Volt 75 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NDC100170A 1700 Volt 100 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NDC10170A 1700 Volt 10 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
NDC25170A 1700 Volt 25 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1700S66AS 1700 Volt 66 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.