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Product Family: 1200V

1200V Silicon Carbide (SiC) Schottky diode bare die provide smaller chip sizes for a given power rating versus equivalent Silicon diodes. Rugged due to their construction material, they can operate reliably at higher frequency & higher junction temperatures and with high surge resilience.

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Available Products:

CPW4-1200-S002B 1200 Volt 2 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPW4-1200-S005B 1200 Volt 5 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPW4-1200-S008B 1200 Volt 8 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPW4-1200-S010B 1200 Volt 10 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPW4-1200-S015B 1200 Volt 15 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
CPW4-1200-S020B 1200 Volt 20 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
EPW4-1200-S010A 1200 Volt 10 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
EPW4-1200-S020A 1200 Volt 20 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Gold on bottom side for hi-rel solder attach.
GD100MPS12-CAL 1200 Volt 100 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
GD30MPS12-CAL 1200 Volt 30 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
GD50MPS12-CAL 1200 Volt 50 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS05120A 1200 Volt 5 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS08120A 1200 Volt 8 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS10120A 1200 Volt 10 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS15120A 1200 Volt 15 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS20120A 1200 Volt 20 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS30120A 1200 Volt 30 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS40120A 1200 Volt 40 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
PCFFS50120A 1200 Volt 50 Amp Silicon Carbide Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S02AS 1200 Volt 30 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S05AS 1200 Volt 2 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S08AS 1200 Volt 5 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S10AS 1200 Volt 8 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S15AS 1200 Volt 10 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S20AS 1200 Volt 15 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
SiS1200S30AS 1200 Volt 20 Amp Silicon Carbide (SiC) Rectifier Diodes specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.