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Bare Die Product Detail: CCC2B150322

1200V:
1200 Volt (1.2kV) 131mΩ Silicon Carbide (SiC) MOSFET specified at >=175°C maximum junction temperature. Metalized with Aluminum on topside for wirebonding and Silver on bottom side for solder attach.
This rugged bare die offers increased power density, high operating temperature / reduced cooling requirement & improves system reliability. Higher speed switching is possible with lower conduction losses over temperature for increased efficiency.
Features:
N/A
Vendor:
CoolCAD
  Electrical Datasheet

Die Physical Data:
Footprint: 1mm² (1mil²)
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Product Families: Used for this device are tabulated below.
Functional:
  • Technology: -
Specification:
VDSS: 1,200V
VGS: -5/+15V
VGS(th)min: 3.2V
ID: 13A
EAS:   n/a
RDS(ON): 131
RDS(on) @ Thigh: 168
Qg: 40nC
COSS: 123pF
QrrBody Diode: 34nC
trrBody Diode:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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