Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: TPS2811

Low-Side Gate Driver:
Inverting Dual High-Speed MOSFET Drivers with Internal Regulator
Features:
  • Features:  Internal Regulator
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.728mm² (2679mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 2
  • Switch Type: MOSFET
  • Ch I/P Logic: Inverting
  • Input Threshold: CMOS
Specification:
VCC (Min): 4.0V
VCC (Max): 14V
IO (PEAK): 2.0A
tpd: 25ns
tf: 15ns
V- @ HS Pin: 0V
tr: 14ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74LS05:
Hex inverters with open collector outputs
SN74LS08:
Quadruple 2-Input Positive-AND Gates
SN74LS86A:
Quad 2-input exclusive-OR gates
SN74LS374:
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.