Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: IS61LV256AL

Low Power SRAM:
256K Low-Voltage Asynchronous SRAM bare die configured as 32K x 8
This bare die is well suited for integration into high density MCP (Multi-Chip-Package), MCM (Multi-Chip-Module) & SiP (System-In-Package) solutions. Supported by the highest quality KGD test flow, wafers deliver high reliability and superior yield.
Features:
  • High-speed access time: 8, 10 ns
  • Automatic power-down when chip is deselected
  • CMOS low power operation
    • 60 µW (typical) CMOS standby
    • 65 mW (typical) operating
  • TTL compatible interface levels
  • Single 3.3V power supply
  • Fully static operation: no clock or refresh required
  • Three-state outputs
  • Committed long term support with very low obsolescence or mask change rate.

To request Die Physical Data please Contact Engineering.
Vendor:
ISSI
  Electrical Datasheet

Die Physical Data:
Footprint: 1mm² (1mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Density: 256K
  • Memory Cell: 6T
  • ECC: No
Specification:
Organisation: VCC (Min): 3.14V
VCC (Max): 3.60V
Speed: 8,10ns
ISB: 0.002mA
ISB(Max): 0.050mA
ICC: 20mA
ICC (Max) @ VNOM: 35mA
Functional:
  • Density: 256K
  • Memory Cell: 6T
  • ECC: No
Specification:
Organisation: VCC (Min): 3.14V
VCC (Max): 3.60V
Speed: 8,10ns
ICC (Max) @ VNOM: 35mA
ISB(CMOS): 40.0mA
ISB(TTL): 1mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74LS08:
Quadruple 2-Input Positive-AND Gates
SN74F86:
Quadruple 2-Input Exclusive-OR Gates
SN74LS174:
Hex D-Type Flip-Flops With Clear
SN75240:
Dual USB Port Transient Suppressor
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.