Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN74LS164

Shift Register:
Serial-in shift registers
Features:
  • Family:  LS
  • Voltage(s) (Nom):  5V
  • tpd @ Nom Voltage(s) :  32ns
  • Output Drive IOL/IOH (Max):  8/-0.4mA
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 3.242mm² (5025mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • I/P Level: TTL
  • O/P Level: TTL
  • 3-State O/P: No
Specification:
VCC (Min): 4.75V
VCC (Max): 5.25V
fMIN @ VNOM: 35MHz
ICC (Max) @ VNOM: 27.00mA
VNOM (Max): 5.00V
Output Drive (Max): 8.0mA
tpd (Max) @ VNOM: 32.0ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

CD74HCT04:
High Speed CMOS Logic Hex Inverters
SN74HC08:
Quadruple 2-Input Positive-AND Gates
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
LT1004-2.5:
Micropower Integrated Precision Voltage Reference
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.