This 5 Volt 8M SRAM bare die is produced using a Hi-Rel 6T transistor memory cel. With long term support this die is an ideal replacement for legacy programs & for high reliability designs.
Features:
- Fast Access Time: 10, 15ns(Max)
- TTL Compatible Inputs and Outputs
- Fully Static Operation, no Clock or Refresh required
- Three State Outputs
Vendor:
Netsol
Electrical Datasheet
Die Physical Data:
Footprint: 28.067mm² (43503.984mil²)
Request Pad Layout
Netsol
Electrical Datasheet
Die Physical Data:
Footprint: 28.067mm² (43503.984mil²)
Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
- Density: 8M
- Memory Cell: 6T
- ECC: No
Specification:
Organisation: VCC (Min): 4.50V
VCC (Max): 5.50V
Speed: 10,15ns
ICC (Max) @ VNOM: 70mA
ISB(CMOS): 28.0mA
ISB(TTL): 35mA
VCC (Max): 5.50V
Speed: 10,15ns
ICC (Max) @ VNOM: 70mA
ISB(CMOS): 28.0mA
ISB(TTL): 35mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.
