Home » News & Articles » Silicon Carbide (SiC) Bare Die Back to List Silicon Carbide (SiC) Bare Die Silicon Carbide (SiC) Bare Die MOSFETs & Schottky Diodes from GeneSiC deliver industry leading performance. We are pleased to announce we now offer GeneSiC Silicon Carbide (SiC) Schottky Diodes & MOSFETs in bare die form. Voltage range from 600V through to 6.5kV. Support for low MOQ prototype material through to volume production Equal-to or electrically superior alternatives versus long lead-times from other provider. Product highlights... MOSFETs available in mass production 1200V 12mΩ 1700V 20mΩ 3300V 15mΩ 6500V 50mΩ 6500V 300mΩ 6500V 325mΩ (Integrated-Schottky SiC MOSFET - On Same Die) There are other Silicon Carbide MOSFET die available outside of the above list which replace most existing SiC MOSFETs from other vendors - Please enquire with your exact specification. MOSFETs available now for sampling 750V 10mΩ 750V 12mΩ 1200V 10mΩ Schottky Diodes available in mass production 1200V - 30A through 100A - Max VF = 1.5V 1700V - 75A - Max VF = 2.4V 3300V - 0.3A and 50A - Max VF = 1.95V There are other Silicon Carbide Bare Die Rectifiers available outside of the above list which replace most existing SiC Diodes from other vendors - Please enquire with your exact specification. For electrical requirements not listed above please contact us as there are both new and older devices that are potentially available to meet specification needs. Additionally we offer custom die selection for MOSFET voltage gate thresholds to assist with applications that utilize paralleling and need close die-to-die matching. Share with LinkedIn Twitter Email My Profile Login Register Contact Email Sales Email Engineering Featured Product EA2M ON Semi Serial 2-Mb SPI Ultra Low-Power EEPROM with ECC for high reliability portable or battery applications. News and Articles High-Speed Die Processing/Sorting Additional capacity delivers >5000UPH throughput with 24-hour operation for volume bare die sort / pick & place.