Available Products:
- IRS2117 600V High-Side High Voltage gate driver IC with typical 0.29A source and 0.6A sink currents supplied in bare die form for driving IGBTs and MOSFETs.
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
Silicon Carbide (SiC) Bare Die MOSFETs from Senan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.