Available Products:
- IRS2117 600V High-Side High Voltage gate driver IC with typical 0.29A source and 0.6A sink currents supplied in bare die form for driving IGBTs and MOSFETs.
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.
Silicon Carbide (SiC) Bare Die MOSFETs from Senan Semiconductor with best PRICE / PERFORMANCE ratio in the industry.