Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: IRFC9240CDV

Power MOSFET:
-200V -12A P-Channel 3rd Generation Power MOSFET with rugged top passivation for mechanical reliability and ease of handling.
Originally produced by International Rectifier (IR) this MOSFET is visually inspected to Military criteria and suited for Hi-Rel applications.
Features:
  • Passivated for ease of handling, improved yields & mechanical ruggedness
  • MIL-STD-750 Method 2072 military visual inspection
Vendor:
International Rectifier
  Electrical Datasheet

Die Physical Data:
Footprint: 22.852mm² (35420.090mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channel: P
  • ESD Diode: No
Specification:
VDS: -200V
VGS: 20
VGS(th)min: 2.00V
RDS(on)max@ 4.5V:   n/a
RDS(on)max@ 10V: 500.0
Qg: 44.0nC
ID: -12.0A
IDM: -48A
ID 70°C:   n/a
RDS(on)@ 1.8V:   n/a
RDS(on)@ 2.5V:   n/a
RDS(on)@ 4.5V:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TLE2071:
Low-Noise High-Speed JFET-Input Operational Amplifier
SN74LS04:
Hex inverters
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
LT1004-2.5:
Micropower Integrated Precision Voltage Reference
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.