- BVCEO > -80V
- IC = -5A High Continuous Collector Current
- ICM = -10A Peak Pulse Current
- ft (min) 70MHz
- Low Saturation Voltage VCE(sat) max -750mV @ -2.5A
- hFE Specified up to -5A for a High Gain Hold-up
- Gold Back Metal For High Reliability Eutectic Die Attach
- Complementary NPN Type: 2N5154
Applications:
- Applications requiring high pulse currents
- DC-to-DC conversion
- MOSFET gate driving
- Motor control
- Power switches
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 2.789mm² (4322.808mil²)
Request Pad Layout
- N/A
IC(Max): -5.00A
hFE1(Min): 70
hFE1(Max): 200
hFE1 @ IC: -2,500.0mA
hFE2(Min): 40
hFE2 @ IC: -5,000.0mA
VCE(sat)1(Max): -0.750V
VCE(sat)1 IC/IB: -2.5/-250A/mA
VCE(sat)2(Max): -1.50V
VCE(sat)2 IC/IB: -5/-500A/mA
fT(Typ): 70MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.