Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: LM158

Precision Amplifier:
Two independent, high gain, frequency compensated amplifiers operating from single 3V-32V or split supplies. Supply current per amp is approximately 1/5th of industry 741. Supply current drain is independent of voltage in split-supply operation.
Military temperature range die operating -55° to +125° range with lowered maximum offset voltage and input offset current. Directly replaces legacy National LM158 MD8 OR MW8, Motorola / ON Semi LM158, ST Micro LM158 and Texas Instruments LM158.
Features:
** END OF LIFE ** NOT RECOMMENDED FOR NEW DESIGN
  • Military Temperature Range, -55°C to +125°C for High Reliability
  • Low VOS: 2mV, and IOS: 3nA
  • Temperature compensated bandwidth (unity gain)
  • Temperature compensated IB: 45nA
  • Wide power supply range, single supply: 3V-32V or dual supplies: ±1.5V to ±16V
  • Differential input voltage range equal to the power supply voltage
  • Large output voltage: 0V to VCC -1.5V swing
  • Input Common-Mode Voltage range includes ground
Vendor:
Silicon Supplies
  Electrical Datasheet

Die Physical Data:
Footprint: 0.605mm² (937.443mil²)
  Request Pad Layout

MIL-STD Qualification:
  38534 Class K LAT 
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 2
  • Shutdown: No
Specification:
CMRR (Typ): 85dB
Gain BW: 0.7000MHz
IIB (Max): 150,000.00pA
VOS (Max): 5.000mV
IO: 30.0mA
IQ per Channel: 0.25000mA
Rail - Rail: Slew Rate: 0.3000V/µs
VS (Max): 32.00V
VS (Min): 3.00V
VN: 40.0nV√Hz
VOS Drift: 7.000µV/°C
Functional:
  • Channels: 2
Specification:
CMRR (Typ): 85dB
Gain BW: 0.700MHz
IIB (Max): 150.00000nA
VOS (Max): 5.000mV
IO: 30.0mA
IQ per Channel: 0.2500mA
Rail - Rail: Slew Rate: 0.30V/µs
VS (Max): 32.00V
VS (Min): 3.00V
VN: 40.0nV√Hz
VOS Drift: 7.0µV/°C
Functional:
  • Channels: 2
  • Shutdown: No
Specification:
Rail - Rail: VS (Min): 3.00V
VS (Max): 32.00V
Gain BW: 0.700MHz
Slew Rate: 0.30V/µs
VOS (Max): 5.000mV
VOS Drift: 7.000µV/°C
IIB (Max): 150.00000nA
VN: 40.0nV√Hz
IQ per Channel: 0.250mA
IO: 30.0mA
CMRR (Typ): 85dB
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

OPA2333:
1.8V, 17µA, microPower, Precision, Zero Drift CMOS Op Amp
SN74LS00:
Quad 2-input positive-NAND gates
CD74HC32:
High Speed CMOS Logic Quad 2-Input OR Gates
CD74HC4040:
High Speed CMOS Logic 12-Stage Binary Counter
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.