- Capable of high temperature operation >= 175°C
- Typ RDS(on) = 300mΩ at VGS=20V ID=5A
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
- High Gate Resistance for Drives
Applications:
- High Temperature Electronics
- Smart Grid
- High voltage DC/DC converters
- Traction
- Pulsed Power
- Technology: Gen 2
VGS: VGS(th)min: n/a
ID: 16A
EAS: n/a
RDS(ON): 300mΩ
RDS(on) @ Thigh: 993mΩ
Qg: n/a
COSS: 82pF
QrrBody Diode: n/a
trrBody Diode: n/a
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.