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Bare Die Product Detail: CSD16323Q3C

Power MOSFET:
Dual Cool N-Channel NexFET Power MOSFET
Features:
  • Qgd:  1.1nC
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.489mm² (6958mil²)
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Product Families: Used for this device are tabulated below.
Functional:
  • Channel: N
  • ESD Diode: No
Specification:
VDS: 25V
VGS: 10
VGS(th)min: 1.10V
RDS(on)max@ 4.5V: 5.5
RDS(on)max@ 10V:   n/a
Qg: 6.2nC
ID: 21.0A
IDM: 112A
ID 70°C:   n/a
RDS(on)@ 1.8V:   n/a
RDS(on)@ 2.5V:   n/a
RDS(on)@ 4.5V: 4.4
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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