- Cost effective high performance upgrade of equivalent Si MOSFET
- Much smaller form factor than Si or SiC for equivalent power density
- Very low gate charge
- Typ RDS(on) =2.5mΩ at VGD=5V, ID=25A
- Zero reverse recovery charge
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
Applications:
- Synchronous Rectification
- Class-D Audio
- High Frequency DC-DC conversion
- Communication Base Stations
- Motor Drivers
Recommended Drivers:
- Monolithic Power Systems - MP8699B
- uPI Semi - 1966e
- Monolithic Power Systems - MPQ1918
- Texas Instruments - LMG1205
Innoscience
Electrical Datasheet
Die Physical Data:
Footprint: 7.455mm² (11555.285mil²)
Request Pad Layout
- Config: Single
- Supply Format: WLCSP
VGS: 6.0V
RDS(ON): 2.5mΩ
RDS(ON)MAX: 3.2mΩ
Qg: 9.20nC
Qgs: 1.90nC
Qgd: 1.70nC
QOSS: 50.00nC
ID: 60A
IDM: 230A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.