- Cost effective high performance upgrade of equivalent Si MOSFET
- Much smaller form factor than Si or SiC for equivalent power density
- Bi-directional blocking capability
- Typ RDS(on) =4mΩ at VGD=5V, ID=10A
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
Applications:
- High-side load switch
- Over-voltage protection for USB ports
- Switching circuits across multiple system power supplies
Recommended Drivers:
- AW32280CSR
- Southchip -SC8571
- Nuvoltatech - NU2205
- Texas Instruments - BQ25980
Innoscience
Electrical Datasheet
Die Physical Data:
Footprint: 4.306mm² (6673.739mil²)
Request Pad Layout
- Config: Bidirection
- Supply Format: WLCSP
VGS: 6.0V
RDS(ON): 4.0mΩ
RDS(ON)MAX: 4.8mΩ
Qg: 15.80nC
Qgs: n/a
Qgd: 8.60nC
QOSS: 12.20nC
ID: 20A
IDM: 100A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.