- High Switching Speed
- hFE improved linearity
- Collector-Emitter Sustaining Voltage: VCEO(sus) = 60V (min) @ 200 mA
- Low collector-emitter saturation voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
Applications:
- General purpose power amplification
- Switching of large currents
Silicon Supplies
Electrical Datasheet
Die Physical Data:
Footprint: 12.960mm² (20088.062mil²)
Request Pad Layout
- N/A
IC(Max): 15.000A
hFE1(Min): 30
hFE1(Max): 150
hFE1 @ IC: 4,000mA
hFE2(Min): 5
hFE2 @ IC: 10,000.00mA
VCE(sat)1(Max): 1.100V
VCE(sat)1 IC/IB: 4/400A/mA
VCE(sat)2(Max): 3.00V
VCE(sat)2 IC/IB: 10/3300A/mA
fT(Min): 3MHz
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.