Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: UCC3819

Power Factor Correction IC:
BiCMOS Power Factor Preregulator
Features:
  • Features:  Average Current Mode, Enable, OVP
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.439mm² (6880mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Type: Single-phase PFC
  • Ctrl Mode: CCM
Specification:
VS (Max): 17V
f(MAX): 250kHz
Duty Cycle(Max): 100%
IS(ACTIVE): 4mA
IO (Peak) Sink Gate Drv: 1.20A
IO (Peak) Source Drv: -1.20A
Startup Current: 0.150mA
UVLOth (Off): 9.70V
UVLOth (On): 10.20V
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL064:
Quad Low-Power JFET-Input General-Purpose Operational Amplifier
SN74LS08:
Quadruple 2-Input Positive-AND Gates
CD4001B:
CMOS Quad 2-Input NOR Gate
CD4070B:
CMOS Quad Exclusive-OR Gate
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.