Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: UCC38086

PWM and Resonant Controller:
Current Mode Push-Pull PWM With Programmable Slope Compensation
Features:
  • Topology:  Boost, Buck, Half-Bridge, Push-Pull
  • Features:  Multi-topology, Programmable Slope Compensation
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.968mm² (7700mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Ctrl Mode: Current
Specification:
f(MAX): 1,000kHz
VIN (MIN): 8.30V
VIN (MAX): 15V
Duty Cycle(Max): 50%
Gate Drive: 1.00A
UVLOth (Off): 4.10V
UVLOth (On): 4.30V
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74LS11:
Triple 3-input positive-AND gates
SN74LS86A:
Quad 2-input exclusive-OR gates
CD4013B:
CMOS Dual D-Type Flip Flop
SN74LS393:
Dual 4-Bit Binary Counters
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.