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Bare Die Product Detail: IS43QR16512A

DDR4:
512M x 16 DDR4 1.2V DRAM Memory Bare Die
This bare die is well suited for integration into high density MCP (Multi-Chip-Package), MCM (Multi-Chip-Module) & SiP (System-In-Package) solutions. Supported by the highest quality KGD test flow, wafers deliver high reliability and superior yield.
Features:
  • VDD = VDDQ = 1.2V, VPP=2.5V
  • Data Integrity:
    • Auto Self Refresh (ASR) by DRAM built-in TS
    • Auto Refresh and Self Refresh Modes
  • DRAM Access bandwidth:
    • Separated IO gating structures by Bank Groups
    • Self Refresh Abort
    • Fine Granularity Refresh
  • Signal Synchronisation:
    • Write Leveling via MR settings
    • Read Leveling via MPR
  • Reliability & Error Handling:
    • Command/Address Parity
    • Data bus Write CRC
    • MPR readout
    • Boundary Scan
  • Speed Grade (CL-TRCD-TRP):
    • 2400Mbps/ 17-17-17 (-083T)
  • Signal Integrity:
    • Internal VREFDQ Training
    • Read Preamble Training
    • Gear Down Mode
    • Per DRAM Adressability
    • Configurable DS for system compatibility
    • Configurable On-Die Termination
    • Data bus Inversion (DBI) for Writes
    • - ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm +/- 1%)
  • Power Saving and efficiency:
    • POD with VDDQ termination
    • Command/Address Latency (CAL)
    • Maximum Power Saving
    • Low power Auto Self Refresh (LPASR)
  • Programmable Functions:
    • Output Driver Impedance (34/48)
    • CAS Write Latency (9/10/11/12/14/16/18/20)
    • Additive Latency (0/CL-1/CL-2)
    • Burst Type (Sequential/Interleaved)
    • Write Recovery Time (10/12/14/16/18/20/24)
    • Read Preamble (1T/2T)
    • Write Preamble (1T/2T)
    • Burst Length (BL8/BC4/BC4 or 8 on the fly)
    • Operation Temperature -40°C to 105°C
    • Committed long term support with very low obsolescence or mask change rate.

    To request Die Physical Data please Contact Engineering.
Vendor:
ISSI
  Electrical Datasheet

Die Physical Data:
Footprint: 1mm² (1mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Density: 8Gb
Specification:
Depth: 512M
Width: VS: 1.2V
Refresh: 8K
Speed: 2400Mbps
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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