Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: S6R1008V1A

High Speed SRAM:
The S6R1008V1A is a 1,048,576-bit high-speed Static Random Access Memory organized as 128k words by 8 bits. The S6R1008V1A uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
This 3.3 Volt 1M SRAM bare die is produced using a Hi-Rel 6T transistor memory cell & directly replaces the obsolete Samsung K6R1008V1 series. With long term support this die is an ideal replacement for legacy programs & for high reliability designs
Features:
  • Fast Access Time:  8, 10, 12, 15ns(Max)
  • TTL Compatible Inputs and Outputs
  • Fully Static Operation, no Clock or Refresh required
  • Three State Outputs
Vendor:
Netsol
  Electrical Datasheet

Die Physical Data:
Footprint: 6.002mm² (9303.283mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Density: 1M
  • Memory Cell: 6T
  • ECC: No
Specification:
Organisation: VCC (Min): 3.00V
VCC (Max): 3.60V
Speed: 8,10,12,15ns
ICC (Max) @ VNOM: 30mA
ISB(CMOS): 6.0mA
ISB(TTL): 10mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HCU04:
Hex Inverters
SN74HC132:
Quadruple Positive-NAND Gates With Schmitt-Trigger Inputs
SN74LS164:
Serial-in shift registers
SN75240:
Dual USB Port Transient Suppressor
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.