- High-speed access time: 10, 12 ns
- 10mW (typical) CMOS standby
- 150 mW (typical) operating
- Output Enable (/OE) and two Chip Enable(/CE1 and CE2) inputs for ease in applications
- Fully static operation: no clock or refresh required
- TTL compatible inputs and outputs
- Single 5V (±10%) power supply
- Committed long term support with very low obsolescence or mask change rate.
- Density: 4M
- Memory Cell: 6T
- ECC: No
VCC (Max): 5.50V
Speed: 10,12ns
ICC (Max) @ VNOM: 55mA
ISB(CMOS): 12.0mA
ISB(TTL): 20mA
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.