Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN55107A

Other Line Circuit:
Dual Line Receiver
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 1.276mm² (1978mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
ICC (Max) @ VNOM:   n/a
VS:   n/a
RL(Driver):   n/a
tpd(Driver):   n/a
Drivers:   n/a
Rx: 2Rx Vth: 25mV
Rx tpd:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL072:
Dual Low-Noise JFET-Input General-Purpose Operational Amplifier
CD74HC00:
High Speed CMOS Logic Quad 2-Input NAND Gates
CD4001B:
CMOS Quad 2-Input NOR Gate
SN74LS109A:
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear and Preset
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.