Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: SN65LVDS33

PHY - LVDS (<800Mbps):
Quad LVDS Receiver with -4 to 5V Common-mode Range
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 4.337mm² (6723mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • I/P Level: CMOS, ECL, LVCMOS, LVDS, LVECL, LVPECL, PECL
  • O/P Level: LVTTL
  • Function: Receiver
Specification:
ICC (Max) @ VNOM: 23mA
Datarate: 400Mbps
ESD HBM: 15kV
Tx:   n/a
Rx: 4
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TLC2201:
Low Noise Precision Rail-To-Rail Output Operational Amplifier
TL062:
Dual Low-Power JFET-Input General-Purpose Operational Amplifier
SN74LS04:
Hex inverters
CD74HC4040:
High Speed CMOS Logic 12-Stage Binary Counter
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.