Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: CDCV857B

Zero Delay Clock Buffer:
2.5 V Phase Lock Loop DDR Clock Driver
Features:
N/A
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 3.126mm² (4845mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Outputs: 10
  • VCC: 2.5V
Specification:
f(MAX): 200MHz
Frequency (MAX): 60MHz
Absolute Jitter: 35ps
Output Drive (Max): 12mA
tsk (OUT): 100ps
t(phase error): 100ps
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

CD74HC00:
High Speed CMOS Logic Quad 2-Input NAND Gates
SN74LS02:
Quad 2-input positive-NOR gates
SN74LS374:
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs
UC2637:
Switched Mode Controller for DC Motor Drive
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.