Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: LMC6001

Low Noise Amplifier:
LMC6001 is a precision low offset voltage operational amplifier which can provide almost noiseless amplification of high resistance signal sources.
The LMC6001 or LMC6001A MDC is ideally suited for applications requiring the lowest possible bias current and noise.
Features:
** END OF LIFE ** NOT RECOMMENDED FOR NEW DESIGN
  • Input Current: 25 fA at 25°C;
  • Input Current Over Temperature: 2 pA
  • Low Power: 750 µA
  • Low VOS: 350 µV
  • Low Input-Referred Voltage Noise: 22 nV/vHz at 1 kHz
  • Low Input-Referred Current Noise: 0.13 fA/vHz at 1 kHz

Applications:

  • Electrometer Amplifiers
  • Photodiode Preamplifiers
  • Ion Detectors
  • A.T.E. Leakage Testing
  • Long interval integrators
  • Ultra-high input impedance instrumentation amplifiers
  • Sensitive electrical-field measurement circuits
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 2.519mm² (3905mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 1
  • Shutdown: No
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.30MHz
Slew Rate: 1.5V/µs
VN: 22.0nV√Hz
VOS (Max): 0.350mV
VOS Drift: 2.50µV/°C
IIB (Max): 2.00000nA
IQ per Channel: 0.950mA
IO: 21.0mA
CMRR (Typ): 83dB
Functional:
  • Channels: 1
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.300MHz
Slew Rate: 1.50V/µs
VOS (Max): 0.350mV
IIB (Max): 0.00200nA
CMRR (Typ): 83dB
VN: 22.0nV√Hz
IQ per Channel: 0.9500mA
IO: 21.0mA
VOS Drift: 2.5µV/°C
Functional:
  • Channels: 1
  • Shutdown: No
Specification:
Rail - Rail: VS (Min): 4.50V
VS (Max): 16.00V
Gain BW: 1.3000MHz
Slew Rate: 1.5000V/µs
VOS (Max): 0.350mV
VOS Drift: 2.500µV/°C
IIB (Max): 2.00pA
CMRR (Typ): 83dB
VN: 22.0nV√Hz
IQ per Channel: 0.95000mA
IO: 21.0mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74ALS00A:
Quadruple 2-Input Positive-NAND Gates
SN74LS00:
Quad 2-input positive-NAND gates
SN74LS86A:
Quad 2-input exclusive-OR gates
SN74ACT86:
Quadruple 2-Input Exclusive-OR Gates
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.