Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: INA154

Difference Amplifier:
High-Speed, Precision Difference Amplifier (G = 1)
Features:
  • VIO (Max) Drift:  20µV/°C
  • BW @ -3dB (Typ) :  3100kHz
Vendor:
Texas Instruments
  Electrical Datasheet

Die Physical Data:
Footprint: 3.534mm² (5478mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channels: 2
Specification:
VS (Max): 36.00V
VS (Min): 8.00V
Slew Rate: 14.00V/µs
CMRR (Min): 80dB
VICM (Max) High: 25.00V
VICM (Min) Low : -25.00V
Gain (Max): 1.0V/V
Gain (Min): 1.0V/V
Gain Error (Max): 0.050%
VIO (Max): 750µV
IQ per Channel: 2.40mA
BW Small Signal: 3.10MHz
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

CD40106B:
CMOS Hex Schmitt Triggers
CD74HC00:
High Speed CMOS Logic Quad 2-Input NAND Gates
CD74HC02:
High Speed CMOS Logic Quad 2-Input NOR Gates
UC2843:
Current-Mode PWM Controller
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.