Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: BFR391A

NPN RF Bipolar Transistor:
This NPN transistor is primarily intended for use in RF wideband amplifiers. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency.
With medium current capability, high fT and low noise this device is a potential replacement for a range of legacy and obsolete RF Transistors in bare die form.
Features:
  • High power gain
  • Wide transition frequency
  • Low noise figure
  • 100mA current capability
  • Military temperature range

Applications:

  • Oscilloscopes
  • Spectrum analyzers
  • Radar systems
  • Test equipment
  • Antenna amplifiers
  • General purpose RF wideband amplifiers
Vendor:
Silicon Supplies
  Electrical Datasheet

Die Physical Data:
Footprint: 0.123mm² (189.876mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
VCEO(Max): 12V
IC(Max): 100mA
Noise Figure: 1.2dB
GP(Typ): 17.5dB
fT(Typ): 16.0GHz
PD: 400mW
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74S04:
Hex inverters
CD4001B:
CMOS Quad 2-Input NOR Gate
SN74LS86A:
Quad 2-input exclusive-OR gates
SN74LS157:
Quadruple 2-Line To 1-Line Data Selectors/Multiplexers
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.