Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: ZVN4424

Small-Signal MOSFET:
N-Channel 240V (D-S) , 500mA High Voltage Small-Signal MOSFET bare die
Features:
N/A
Vendor:
Diodes Inc
  Electrical Datasheet

Die Physical Data:
Footprint: 1.613mm² (2500.003mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channel: N
Specification:
VDS: 240V
VGS: 40±V
VGS(th)min: 0.8V
VGS(th)max: 1.8V
RDS(on)max@ 4.5V:   n/a
RDS(on)max@ 10V: 5.5Ω
Qg:   n/a
ID: 500mA
IDM: 1,500mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

CD74HC32:
High Speed CMOS Logic Quad 2-Input OR Gates
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
CD74HC74:
High Speed CMOS Logic Dual Positive-Edge-Triggered D-Type Flip-Flops with Set and Reset
SN74LS85:
4-bit magnitude comparators
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
SiS8017:
4-channel CMOS / LVCMOS Digital Isolator eliminates current noise and provides up to 5kV RMS isolation per UL 1577.