Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: LS5909

N-Channel Dual Monolithic:
Monolithic Dual N-Channel JFET amplfier - Low leakage, low drift. The LS5909 monolithic dual JFET features tight matching & low drift over temperature and is useful in precision instrumentation applications where tight tracking is required.
LS5909 features low drift, ultra-low leakage, low pinchoff. This device is a direct replacement for Interfet, Intersil, Motorola, National / Fairchild, Philips, Vishay / Siliconix 2N5909.
Features:
  • Low gate leakage IG 150fA (TYP)
  • Low drift over temperature ≤ 40µV/°C
  • Low pinchoff VP 2V (TYP)

Applications:

  • Wideband differential amplifiers
  • High-speed temperature compensated single-ended input amplifiers
  • High speed comparators
  • Impedance conV/√Hzerters
  • Vibration detectors

Test conditions:

  • BVGSS -40V @ IG = -1000 nA, VDS = 0V
  • IGSS(MAX) -2 pA @ VGD = -20V, VDS = 0V
  • |VGS1-VGS2|(MAX) 5mV @ VDG = 10V, ID = 30 µA
  • ∆|VGS1-VGS2|/∆T 5 µV°C @ VGD = 10V, ID = 30µA, -55°C to +125°C
  • VP(MIN) -0.6V @ VDS = 10V, ID = 1 nA
  • VP(MAX) -4.5V @ VDS = 10V, ID = 1 nA
  • IDSS(MIN) 0.1mA @ VDG = 10V, VGS = 0V
  • IDSS(MAX) 1mA @ VDG = 10V, VGS = 0V
  • Gfs(MIN) 70µS @ VDG = 10V, VGS = 0V, f = 1kHz
  • en(TYP) 20nV/√Hz @ VDS = 10V, ID = 30µA, f = 10Hz, NBW = 1Hz
  • CISS(MAX) 3pF @ VDS = 10V, ID = µA, VGS = 0V, f = 1MHz
  • CRSS(MAX) 1.5pF @ VDS = 10V, VGS = 0V, ID = µA, f = 1MHz
Vendor:
Linear Systems
  Electrical Datasheet

Die Physical Data:
Footprint: 0.284mm² (440mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Type: Low Leakage
Specification:
BVGSS: -40V
IGSS: -2pA
|VGS1-VGS2|: 15mV
∆|VGS1-VGS2|/∆T: 40µV/°C
VGS(OFF) MIN: -0.60V
VGS(OFF) MAX: -4.5V
IDSS(MIN): 0.06mA
IDSS(MAX): 1.0mA
gfs(MIN): 70µS
en: 20.0nV√Hz
CISS(MAX): 3pF
CRSS(MAX): 1.5pF
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

SN74HC244:
Octal Buffers And Line Drivers With 3-State Outputs
SN74LS74A:
Dual D-type pos.-edge-triggered flip-flops with preset and clear
SN74LS174:
Hex D-Type Flip-Flops With Clear
SN74LS123:
Dual retriggerable monostable multivibrators
INN650N080BS:
650 Volt 29 Amp 60mOhm Gallium Nitride (GaN) MOSFET. Metalized with Aluminum on topside for wirebonding.
AMS1200013B3:
1200 Volt 13mOhm Silicon Carbide (SiC) MOSFET with customizable top metal back metals optimized for wire-bonding or sintering.