- Low drift over temperature ≤ 50µV/°C
- Low leakage IG 20pA (TYP) (TYP)
- Low noise en 10nV/√Hz (TYP)
- Low input capacitance 6pF (MAX)< /ul>
- Wideband differential amplifiers
- High input impedance amplifiers
- BVGSS -60V @ IG = -1 µA, VDS = 0V
- IGSS(MAX) -100 pA @ VGD = -20V, VDS = 0V
- |VGS1-VGS2|(MAX) 5mV @ VDG = 20V, ID = 200 µA
- ∆|VGS1-VGS2|/∆T 10 µV°C @ VGD = 20V, ID = 200µA, -55°C to +125°C
- VP(MIN) -1V @ VDS = 20V, ID = 1 nA
- VP(MAX) -4.5V @ VDS = 20V, ID = 1 nA
- IDSS(MIN) 0.5mA @ VDS = 20V, VGS = 0V
- IDSS(MAX) 5mA @ VDS = 20V, VGS = 0V
- Gfs(MIN) 1000µS @ VDG = 20V, VGS = 0V, f = 1kHz
- en(MAX) 15nV/√Hz @ VDS = 20V, ID = 200µA, f = 10Hz, NBW = 1Hz
- CISS(MAX) 6pF @ VDS = 20V, ID = µA, VGS = 0V, f = 1MHz
- CRSS(MAX) 2pF @ VDS = 20V, VGS = 0V, ID = µA, f = 1MHz
Applications:
Test conditions:
Linear Systems
Electrical Datasheet
Die Physical Data:
Footprint: 0.640mm² (992mil²)
Request Pad Layout
- Type: General Purpose
IGSS: -100pA
|VGS1-VGS2|: 15mV
∆|VGS1-VGS2|/∆T: 50µV/°C
VGS(OFF) MIN: -1.00V
VGS(OFF) MAX: -4.5V
IDSS(MIN): 0.50mA
IDSS(MAX): 5.0mA
gfs(MIN): 1,000µS
en: 15.0nV√Hz
CISS(MAX): 6pF
CRSS(MAX): 2.0pF
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.