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Bare Die Product Detail: SIGC18T60UN

600V & 650V IGBT:
High Speed IGBT Bare Die in NPT technology. Infineon High Speed IGBT 2 family is a non punch-through IGBT technology with low switching losses and high robustness.
Features:
  • Low eoff
  • 600V NPT technology
  • 100µm thickness
  • Short circuit rated
  • Positive temperature coefficient
  • Easy paralleling

Applications:

  • Welding, UPS, PFC
Vendor:
Infineon
  Electrical Datasheet

Die Physical Data:
Footprint: 18.490mm² (28659.588mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Status: Active
  • Technology: NPT
  • TJ(MAX): 150°C
  • Short Circuit Rated: Yes
  • Integral Gate Resistor: No
  • Top Metal: Bondable
Specification:
VCE(Max): 600V
IC(Max): 20A
VCEsat(Max): 3.15V
VGEth(Min): 3.0V
VGEth(Max): 5.0V
tr: 9ns
tf: 35ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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