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Bare Die Product Detail: IGC54T65T8RM

600V & 650V IGBT:
IGBT3 Bare Die Medium Power. The Trenchstop™ IGBT is a combination of Trench & Field Stop technology considered to be a benchmark in the industry.
Features:
  • 650V Trench & Field Stop technology
  • High short circuit capability with self-limiting short circuit current
  • Positive temperature coefficient
  • Easy paralleling

Applications:

  • Motor & Control Drives
Vendor:
Infineon
  Electrical Datasheet

Die Physical Data:
Footprint: 53.551mm² (83004.148mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Status: Active
  • Technology: FS Trench
  • TJ(MAX): 175°C
  • Short Circuit Rated: Yes
  • Integral Gate Resistor: Yes
  • Top Metal: Bondable
Specification:
VCE(Max): 650V
IC(Max): 100A
VCEsat(Max): 1.82V
VGEth(Min): 5.1V
VGEth(Max): 6.4V
tr:   n/a
tf:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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