Features:
- 1200V NPT technology
- 180µm thickness
- Low turn-off losses
- Positive temperature coefficient
- Easy paralleling
- Integrated gate resistor
Applications:
- Drives, SMPS, Resonant applications
Vendor:
Infineon
Electrical Datasheet
Die Physical Data:
Footprint: 122.766mm² (190288.5mil²)
Request Pad Layout
Infineon
Electrical Datasheet
Die Physical Data:
Footprint: 122.766mm² (190288.5mil²)
Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
- Status: NRND
- Technology: NPT
- TJ(MAX): 150°C
- Short Circuit Rated: No
- Integral Gate Resistor: Yes
Specification:
VCE(Max): 1,200V
IC(Max): 75A
VCEsat(Max): 3.70V
VGEth(Min): 4.5V
VGEth(Max): 6.5V
tr: 0.06ns
tf: 0.03ns
IC(Max): 75A
VCEsat(Max): 3.70V
VGEth(Min): 4.5V
VGEth(Max): 6.5V
tr: 0.06ns
tf: 0.03ns
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.
