- Cost effective high performance upgrade of equivalent Si MOSFET
- Much smaller form factor than Si or SiC for equivalent power density
- Capable of high temperature operation >150°C
- Typ RDS(on) =620mΩ at VGS=6V, ID=1A
- High Speed Switching with Low Capacitance
- Ease of Paralleling
- Resistant to Latch-up
Applications:
- High Temperature Electronics
- Industrial Motor Loads
- Wind Generation Inverter
- Solar Inverter
- EV battery chargers
- High voltage DC/DC converters
- UPS
- Switching Power Supplies
Recommended Drivers:
- Joulwatt JW1515H (QR)
- Southchip SC3021C (QR)
- Meraki MK2697G (QR)
- Texas Instruments UCC28056 (PFC)
- NXP TEA2017AT (PFC+LLC)
- MPS HR1211 (PFC+LLC)
- Heyday HEY1011
Innoscience
Electrical Datasheet
Die Physical Data:
Footprint: 1.450mm² (2247.042mil²)
Request Pad Layout
- Supply Format: Die
VGS: 7V
RDS(ON): 620mΩ
RDS(ON)MAX: 800mΩ
Qg: 0.70nC
Qgs: 0.10nC
Qgd: 0.40nC
QOSS: 5.00nC
ID: 2.0A
IDM: 5.0A
- Green:Available from stock or at low factory MOQ.
- Amber: Available on factory order with MOQ.
- Red: High factory MOQ may apply, please ask for details.
- Green: This bare die is specified and tested for use in high reliability applications.
- Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
- Red: This bare die is not specified or specifically designed for use in high reliability applications.
- Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
- Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
- Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.