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Bare Die Product Detail: FZT855

NPN Bipolar Transistor:
NPN Bipolar transistor
N-Channel Bipolar transistors for use in general purpose applications
Features:
  • Diodes Inc
Vendor:
Diodes Inc
  Electrical Datasheet

Die Physical Data:
Footprint: 2.810mm² (4356.005mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
V(BR)CEO, VCES: 150.0V
IC(Max): 5.000A
hFE1(Min): 100
hFE1(Max):   n/a
hFE1 @ IC: 1,000mA
hFE2(Min): 15
hFE2 @ IC: 5,000.00mA
VCE(sat)1(Max): 0.065V
VCE(sat)1 IC/IB: 0.5/50A/mA
VCE(sat)2(Max): 0.11V
VCE(sat)2 IC/IB: 1/200A/mA
fT(Min): 90MHz
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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