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Bare Die Product Detail: 2C4957

PNP RF Bipolar Transistor:
The 2C4957 is a silicon VHF-UHF PNP RF transistor bare die designed for high gain high frequency amplifier, oscillator and mixer applications.
This bare die is a possible replacement for legacy Microsemi (MSC), Motorola (MOT) or Semicoa 2N4957 and 2C4957.
Features:
** END OF LIFE ** NOT RECOMMENDED FOR NEW DESIGN
  • Low-power
  • High frequency

Applications:

  • High gain low noise amplifier
  • Oscillators
  • Mixers
Vendor:
Central
  Electrical Datasheet

Die Physical Data:
Footprint: 0.159mm² (246.490mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
    N/A
Specification:
VCEO(Max): -25V
IC(Max): -30mA
Noise Figure:   n/a
GP(Typ): 25.0dB
fT(Typ): 2.5GHz
PD:   n/a
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

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