Innovate > Integrate > Empower - Design at Die Level

  Back to List

Bare Die Product Detail: ZVP0545

Small-Signal MOSFET:
P-Channel -450V (D-S) , -400mA Very High Voltage Small-Signal MOSFET bare die
Features:
N/A
Vendor:
Diodes Inc
  Electrical Datasheet

Die Physical Data:
Footprint: 1.137mm² (1762.002mil²)
  Request Pad Layout
Product Families: Used for this device are tabulated below.
Functional:
  • Channel: P
Specification:
VDS: -450V
VGS: 20±V
VGS(th)min: -1.5V
VGS(th)max: -4.5V
RDS(on)max@ 4.5V:   n/a
RDS(on)max@ 10V: 150.0Ω
Qg:   n/a
ID: -45mA
IDM: -400mA
Other Detail: Important information for this device is tabulated below.
Traffic light setting for Minimum Order Quantity indicates the following:
  • Green:Available from stock or at low factory MOQ.
  • Amber: Available on factory order with MOQ.
  • Red: High factory MOQ may apply, please ask for details.
Traffic light setting for High Reliability indicates the following:
  • Green: This bare die is specified and tested for use in high reliability applications.
  • Amber: This bare die can meet higher reliability specifications with additional testing & qualification, please ask for details.
  • Red: This bare die is not specified or specifically designed for use in high reliability applications.
Traffic light setting for Space Grade indicates the following:
  • Green: This bare die is qualified for space applications or has space level qualification data, please ask for details.
  • Amber: This bare die can be specified for space applications with additional testing and qualification, please ask for details.
  • Red: Suitability of this bare die for space applications is unknown and requires further qualification, please ask for details.

Other Featured Products:

TL062:
Dual Low-Power JFET-Input General-Purpose Operational Amplifier
CD4050B:
CMOS Hex Non-Inverting Buffer/Converter
SN74HC86:
Quadruple 2-Input Exclusive-OR Gates
CD4094B:
CMOS 8-Stage Shift-and-Store Bus Register
EA2M:
ON Semi Serial 2-Mb SPI Ultra Low-Power EEPROM with ECC for high reliability portable or battery applications.
NTC020N120SC1:
ON Semi 1200 Volt 20mOhm 103A Silicon Carbide MOSFET specified at >=175°C maximum junction temperature.